• DocumentCode
    2888250
  • Title

    A 1Mb CMOS EPROM with a 13.5 µm2cell

  • Author

    Coffman, Thayne ; Boyd, D. ; Dolby, D. ; Gill, Michael ; Kady, S. ; Lahiry, R. ; Sun Lin ; McEkroy, D. ; Mitchell, A. ; Paterson, J. ; Schreck, Jan ; Shah, Parikshit ; Takeda, F.

  • Author_Institution
    Texas Instruments, Inc., Houston, TX, USA
  • Volume
    XXX
  • fYear
    1987
  • fDate
    - Feb. 1987
  • Firstpage
    72
  • Lastpage
    73
  • Abstract
    A 64K×16b EPROM with an access time of 159ns will be reported. Buried diffusion reduces the number of array contacts to one every 16b. The circuit includes eight test features and requires a program time of 65ns for the complete array.
  • Keywords
    Circuit testing; Dielectric measurements; EPROM; Functional programming; PROM; Stress measurement; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1987.1157140
  • Filename
    1157140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2888250