Title :
A 1Mb CMOS EPROM with a 13.5 µm2cell
Author :
Coffman, Thayne ; Boyd, D. ; Dolby, D. ; Gill, Michael ; Kady, S. ; Lahiry, R. ; Sun Lin ; McEkroy, D. ; Mitchell, A. ; Paterson, J. ; Schreck, Jan ; Shah, Parikshit ; Takeda, F.
Author_Institution :
Texas Instruments, Inc., Houston, TX, USA
Abstract :
A 64K×16b EPROM with an access time of 159ns will be reported. Buried diffusion reduces the number of array contacts to one every 16b. The circuit includes eight test features and requires a program time of 65ns for the complete array.
Keywords :
Circuit testing; Dielectric measurements; EPROM; Functional programming; PROM; Stress measurement; Time measurement; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157140
