DocumentCode
2888372
Title
High power supply rejection wideband Low-Dropout regulator
Author
Coulot, Thomas ; Rouat, Emmanuel ; Hasbani, Frederic ; Lauga-Larroze, E. ; Fournier, J.-M.
Author_Institution
Embedded Power Manage. Team, STMicroelectron., Crolles, France
fYear
2013
fDate
3-6 June 2013
Firstpage
436
Lastpage
441
Abstract
A 90nm 1.4-3.3V CMOS Low-Dropout regulator for noise-sensitive low-current RF blocks in mixed SoC applications is presented. It is based on a two loops topology with replica technique and an additional Gm-C filter introduced in the replica loop for high power supply rejection at both low and high frequencies. Complete PSR and stability analyses are presented. The regulator is implemented in a 90nm CMOS technology and achieves a PSR better than -60dB from 0 to 30MHz with only a 47nF external output capacitor. This architecture is highly versatile since the replica design may remain very basic. The active chip area is only 0.0088mm2, making this LDO an ideal block for a locally distributed power management strategy.
Keywords
CMOS analogue integrated circuits; CMOS digital integrated circuits; integrated circuit design; system-on-chip; voltage regulators; CMOS low-dropout regulator; CMOS technology; Gm-C filter; PSR analysis; frequency 0 MHz to 30 MHz; high-power supply rejection wideband low-dropout regulator; locally-distributed power management strategy; loop topology; mixed SoC applications; noise-sensitive low-current RF blocks; replica design; replica technique; size 90 nm; stability analysis; voltage 1.4 V to 3.3 V; Frequency locked loops; Regulators; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
ECCE Asia Downunder (ECCE Asia), 2013 IEEE
Conference_Location
Melbourne, VIC
Print_ISBN
978-1-4799-0483-9
Type
conf
DOI
10.1109/ECCE-Asia.2013.6579133
Filename
6579133
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