Title :
High power supply rejection wideband Low-Dropout regulator
Author :
Coulot, Thomas ; Rouat, Emmanuel ; Hasbani, Frederic ; Lauga-Larroze, E. ; Fournier, J.-M.
Author_Institution :
Embedded Power Manage. Team, STMicroelectron., Crolles, France
Abstract :
A 90nm 1.4-3.3V CMOS Low-Dropout regulator for noise-sensitive low-current RF blocks in mixed SoC applications is presented. It is based on a two loops topology with replica technique and an additional Gm-C filter introduced in the replica loop for high power supply rejection at both low and high frequencies. Complete PSR and stability analyses are presented. The regulator is implemented in a 90nm CMOS technology and achieves a PSR better than -60dB from 0 to 30MHz with only a 47nF external output capacitor. This architecture is highly versatile since the replica design may remain very basic. The active chip area is only 0.0088mm2, making this LDO an ideal block for a locally distributed power management strategy.
Keywords :
CMOS analogue integrated circuits; CMOS digital integrated circuits; integrated circuit design; system-on-chip; voltage regulators; CMOS low-dropout regulator; CMOS technology; Gm-C filter; PSR analysis; frequency 0 MHz to 30 MHz; high-power supply rejection wideband low-dropout regulator; locally-distributed power management strategy; loop topology; mixed SoC applications; noise-sensitive low-current RF blocks; replica design; replica technique; size 90 nm; stability analysis; voltage 1.4 V to 3.3 V; Frequency locked loops; Regulators; Switches;
Conference_Titel :
ECCE Asia Downunder (ECCE Asia), 2013 IEEE
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4799-0483-9
DOI :
10.1109/ECCE-Asia.2013.6579133