• DocumentCode
    2888372
  • Title

    High power supply rejection wideband Low-Dropout regulator

  • Author

    Coulot, Thomas ; Rouat, Emmanuel ; Hasbani, Frederic ; Lauga-Larroze, E. ; Fournier, J.-M.

  • Author_Institution
    Embedded Power Manage. Team, STMicroelectron., Crolles, France
  • fYear
    2013
  • fDate
    3-6 June 2013
  • Firstpage
    436
  • Lastpage
    441
  • Abstract
    A 90nm 1.4-3.3V CMOS Low-Dropout regulator for noise-sensitive low-current RF blocks in mixed SoC applications is presented. It is based on a two loops topology with replica technique and an additional Gm-C filter introduced in the replica loop for high power supply rejection at both low and high frequencies. Complete PSR and stability analyses are presented. The regulator is implemented in a 90nm CMOS technology and achieves a PSR better than -60dB from 0 to 30MHz with only a 47nF external output capacitor. This architecture is highly versatile since the replica design may remain very basic. The active chip area is only 0.0088mm2, making this LDO an ideal block for a locally distributed power management strategy.
  • Keywords
    CMOS analogue integrated circuits; CMOS digital integrated circuits; integrated circuit design; system-on-chip; voltage regulators; CMOS low-dropout regulator; CMOS technology; Gm-C filter; PSR analysis; frequency 0 MHz to 30 MHz; high-power supply rejection wideband low-dropout regulator; locally-distributed power management strategy; loop topology; mixed SoC applications; noise-sensitive low-current RF blocks; replica design; replica technique; size 90 nm; stability analysis; voltage 1.4 V to 3.3 V; Frequency locked loops; Regulators; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ECCE Asia Downunder (ECCE Asia), 2013 IEEE
  • Conference_Location
    Melbourne, VIC
  • Print_ISBN
    978-1-4799-0483-9
  • Type

    conf

  • DOI
    10.1109/ECCE-Asia.2013.6579133
  • Filename
    6579133