Electrical dc conductivity and laser damage threshold of pure and urea-doped KDP single crystals

Author

Levchenko, A.N. ; Pritula, I.M. ; Kosinova, A.V. ; Kolybayeva, M.I. ; Tyutyunnik, V.B. ; Krivtsov, A.V. ; Starikov, A.I. ; Gavri, A.P.

Author_Institution

V. N. Karazin Kharkiv Nat. Univ., Kharkiv, Ukraine

fYear

2010

fDate

12-14 Sept. 2010

Firstpage

136

Lastpage

138

Abstract

Electrical dc conductivity and laser damage threshold of pure and urea doped KH₂PO₄ crystals are investigated. It is found that the crystals with a low electrical conductivity have a high laser damage threshold. It is shown that increase of the resistivity and the laser damage threshold of the crystals realizes by the crystal growth from urea-containing aqueous solutions. The optimum molar value of urea in the solutions is found to be in 0.1-1 M range.

Keywords

crystal growth from solution; electrical conductivity; electrical resistivity; hydrogen compounds; laser beam effects; potassium compounds; KH₂PO₄; crystal growth from urea-containing aqueous solutions; electrical dc conductivity; laser damage threshold; pure KDP single crystals; resistivity; urea-doped KDP single crystals; Conductivity; Crystals; Fiber lasers; Laser excitation; Laser modes; Luminescence; Measurement by laser beam;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-6994-9

Type

conf

DOI

10.1109/LFNM.2010.5624222

Filename

5624222