Title :
A million-cycle CMOS 256K EEPROM
Author :
Cioaca, D. ; Tien Lin ; Chan, Alvin ; Ling Chen ; Mihnea, Amalya
Author_Institution :
SEEQ Technology, Inc., San Jose, CA, USA
Abstract :
This paper will discuss a device with an endurance of 1-million cycles and a read access time of 150ns, fabricated in 1.25μm double poly CMOS. Circuit modes include byte write and page write, with means of endurance selection.
Keywords :
CMOS process; CMOS technology; Circuits; Dielectrics; EPROM; Latches; Power dissipation; Protection; Testing; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157155
