Title :
Ultra-low threshold erbium-implanted microcavity laser on silicon
Author :
Kalkman, J. ; Tchebotareva, A. ; Polman, A. ; Kippenberg, T.J. ; Min, B. ; Vahala, K.
Author_Institution :
FOM Inst. for AMOLF, Amsterdam, Netherlands
Abstract :
An ultra-low threshold erbium-doped silica microcavity laser operating at 1.5 μm is presented. The toroidally-shaped silica glass microcavity is made on a Si substrate using standard CMOS fabrication technology in combination with a laser reflow process. Light is coupled into the toroidal laser cavity using a tapered optical fiber that is evanescently coupled to a resonator mode. Laser cavity quality factors as high as 4×107 are achieved and single-mode lasing is observed above a launched power threshold of 5 μW.
Keywords :
Q-factor; erbium; laser modes; microcavity lasers; optical fabrication; silicon compounds; solid lasers; 1.5 mum; Si; Si substrate; SiO2:Er; erbium-doped silica microcavity laser; evanescent coupling; laser reflow; quality factors; resonator mode; single-mode lasing; standard CMOS fabrication; tapered optical fiber; CMOS process; CMOS technology; Erbium-doped fiber lasers; Glass; Laser modes; Microcavities; Optical coupling; Optical device fabrication; Optical fibers; Silicon compounds;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567518
