Title :
DRAM cell structures and technologies
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
Over a dozen different cell structures and technologies have been proposed in the past few years to reduce DRAM cell size. Each of the proposals represents a tradeoff between process complexity, cell size and cell perfarmance. This panel will attempt to identify the advantages and disadvantages of these competing approaches and try to understand the trend in cell structures and technologies for the next generation of DRAMs.
Keywords :
Costs; History; Instruments; Isolation technology; Large scale integration; Lithography; Memory management; Production; Random access memory; Research and development management;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157163