• DocumentCode
    2888725
  • Title

    DRAM cell structures and technologies

  • Author

    Shah, Aamer

  • Author_Institution
    Texas Instruments Inc., Dallas, TX, USA
  • Volume
    XXX
  • fYear
    1987
  • fDate
    0-0 Feb. 1987
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    Over a dozen different cell structures and technologies have been proposed in the past few years to reduce DRAM cell size. Each of the proposals represents a tradeoff between process complexity, cell size and cell perfarmance. This panel will attempt to identify the advantages and disadvantages of these competing approaches and try to understand the trend in cell structures and technologies for the next generation of DRAMs.
  • Keywords
    Costs; History; Instruments; Isolation technology; Large scale integration; Lithography; Memory management; Production; Random access memory; Research and development management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1987.1157163
  • Filename
    1157163