DocumentCode :
2888725
Title :
DRAM cell structures and technologies
Author :
Shah, Aamer
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Volume :
XXX
fYear :
1987
fDate :
0-0 Feb. 1987
Firstpage :
118
Lastpage :
119
Abstract :
Over a dozen different cell structures and technologies have been proposed in the past few years to reduce DRAM cell size. Each of the proposals represents a tradeoff between process complexity, cell size and cell perfarmance. This panel will attempt to identify the advantages and disadvantages of these competing approaches and try to understand the trend in cell structures and technologies for the next generation of DRAMs.
Keywords :
Costs; History; Instruments; Isolation technology; Large scale integration; Lithography; Memory management; Production; Random access memory; Research and development management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1987.1157163
Filename :
1157163
Link To Document :
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