DocumentCode
2888725
Title
DRAM cell structures and technologies
Author
Shah, Aamer
Author_Institution
Texas Instruments Inc., Dallas, TX, USA
Volume
XXX
fYear
1987
fDate
0-0 Feb. 1987
Firstpage
118
Lastpage
119
Abstract
Over a dozen different cell structures and technologies have been proposed in the past few years to reduce DRAM cell size. Each of the proposals represents a tradeoff between process complexity, cell size and cell perfarmance. This panel will attempt to identify the advantages and disadvantages of these competing approaches and try to understand the trend in cell structures and technologies for the next generation of DRAMs.
Keywords
Costs; History; Instruments; Isolation technology; Large scale integration; Lithography; Memory management; Production; Random access memory; Research and development management;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1987.1157163
Filename
1157163
Link To Document