Title :
Competing technologies for high-speed digital systems
Author_Institution :
RCA Laboratories, Somerville, NJ
Abstract :
Several new technologies, including sub-micron CMOS, SOI/ SMOS, BiCMOS GaAs and advanced bipolar ECL, are being developed for the super-fast ULSI digital system of the ´90s. . . The panel will discuss whether the continued scaling of bulk CMOS will be adequate or whether a change over to technologies such as SOI or GaAs will be required . . . Meaningful measures for comparing these technologies will also be assessed.
Keywords :
BiCMOS integrated circuits; CMOS process; CMOS technology; Delay; Digital systems; FETs; Gallium arsenide; Large scale integration; Power dissipation; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157166
