DocumentCode :
2888804
Title :
High-Q semiconductor micropillars with embedded quantum dots of enlarged dimensions
Author :
Löffler, A. ; Reithmaier, J.P. ; Sek, G. ; Hofmann, C. ; Reitienstein, S. ; Kamp, M. ; Forchel, A.
Author_Institution :
Tech. Physik, Wurzburg Univ., Germany
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
361
Abstract :
Vertical emitting AlAs/GaAs microcavity pillars with a new type of GaInAs quantum dots within a one λ-cavity have been realised based on high reflectivity distributed Bragg reflectors. High quality factors were achieved due to an improved fabrication technology. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga0.70In0.30As nucleation layer. In this paper, micropillars with a maximum quality factor of up to 27700 for a 4 μm wide microcavity was presented.
Keywords :
III-V semiconductors; Q-factor; aluminium compounds; distributed Bragg reflectors; gallium arsenide; micro-optics; microcavities; semiconductor quantum dots; AlAs-GaAs; Ga0.70In0.30As nucleation layer; GaInAs; GaInAs quantum dots; distributed Bragg reflectors; quality factors; reflectivity; vertical emitting AlAs/GaAs microcavity pillars; Capacitive sensors; Distributed Bragg reflectors; Gallium arsenide; Microcavities; Mirrors; Optical resonators; Q factor; Quantum dots; Scanning electron microscopy; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
Type :
conf
DOI :
10.1109/EQEC.2005.1567526
Filename :
1567526
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2888804
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