Title :
Optimization of lasing in semiconductor micro-stadiums
Author :
Cao, H. ; Fang, W.
Author_Institution :
Dept. of Phys. & Astron., Northwestern Univ., Evanston, IL, USA
Abstract :
In this paper, lasing in semiconductor micro-stadiums of various aspect ratio is studied to find out how the cavity shape affects the lasing frequency and threshold. The sample investigated contains a thin InAs quantum well between two 100 nm GaAs cladding layers. Numerical simulation using the finite-difference time-domain (FDTD) method are carried out.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium arsenide; indium compounds; microcavity lasers; quantum well lasers; semiconductor device models; GaAs cladding layers; InAs quantum well; cavity shape; finite-difference time-domain method; lasing frequency; lasing threshold; semiconductor microstadium lasing; Astronomy; Circuits; Finite difference methods; Frequency; Gallium arsenide; Laser excitation; Orbits; Semiconductor lasers; Shape; Time domain analysis;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567528
