DocumentCode
2888879
Title
An analytical model for performance yield of nanoscale SRAM accounting for the sense amplifier strobe signal
Author
Ryan, Joseph F. ; Khanna, Sudhanshu ; Calhoun, Benton H.
Author_Institution
Univ. of Virginia, Charlottesville, VA, USA
fYear
2011
fDate
1-3 Aug. 2011
Firstpage
297
Lastpage
302
Abstract
This paper presents a model for the exact distribution of performance yield in an SRAM using order statistics for strobed and non-strobed sense amplifier (SA) implementations. Monte-Carlo simulation results validate the model, which offers a speedup in runtime of 3 to 4 orders of magnitude. Using the model, we quantify the potential benefits of using a non-strobed SA in different types of system architectures.
Keywords
Monte Carlo methods; SRAM chips; amplifiers; circuit simulation; integrated circuit yield; nanoelectronics; Monte Carlo simulation; analytical model; nanoscale SRAM performance yield; nonstrobed sense amplifier implementation; order statistics; sense amplifier strobe signal; strobed sense amplifier; Computational modeling; Delay; Equations; Latches; Mathematical model; Random access memory; SRAM; non-strobed sense amp; yield; yield model;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design (ISLPED) 2011 International Symposium on
Conference_Location
Fukuoka
ISSN
Pending
Print_ISBN
978-1-61284-658-3
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/ISLPED.2011.5993653
Filename
5993653
Link To Document