Title :
An analytical model for performance yield of nanoscale SRAM accounting for the sense amplifier strobe signal
Author :
Ryan, Joseph F. ; Khanna, Sudhanshu ; Calhoun, Benton H.
Author_Institution :
Univ. of Virginia, Charlottesville, VA, USA
Abstract :
This paper presents a model for the exact distribution of performance yield in an SRAM using order statistics for strobed and non-strobed sense amplifier (SA) implementations. Monte-Carlo simulation results validate the model, which offers a speedup in runtime of 3 to 4 orders of magnitude. Using the model, we quantify the potential benefits of using a non-strobed SA in different types of system architectures.
Keywords :
Monte Carlo methods; SRAM chips; amplifiers; circuit simulation; integrated circuit yield; nanoelectronics; Monte Carlo simulation; analytical model; nanoscale SRAM performance yield; nonstrobed sense amplifier implementation; order statistics; sense amplifier strobe signal; strobed sense amplifier; Computational modeling; Delay; Equations; Latches; Mathematical model; Random access memory; SRAM; non-strobed sense amp; yield; yield model;
Conference_Titel :
Low Power Electronics and Design (ISLPED) 2011 International Symposium on
Conference_Location :
Fukuoka
Print_ISBN :
978-1-61284-658-3
Electronic_ISBN :
Pending
DOI :
10.1109/ISLPED.2011.5993653
