Title :
A 42ns 1Mb CMOS SRAM
Author :
Minato, O. ; Sasaki, T. ; Honjo, S. ; Ishibashi, Koji ; Sasaki, Yutaka ; Moriwaki, Nobihiro ; Nishimura, Kosuke ; Sakai, Yoshiki ; Meguro, Sakae ; Tsunematsu, M. ; Masuhara, T.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A 128KW×8b RAM with address access time of 42ns and power dissipation of 200mW at 10MHz will be presented. Cell size of 45μm2has been achieved by using polysilicon technology and 0.8μm MOS transistors.
Keywords :
Battery charge measurement; CMOS technology; Electrical resistance measurement; Load flow control; MOSFETs; Power dissipation; Random access memory; Read-write memory; Space technology; Variable structure systems;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157184
