DocumentCode :
2889245
Title :
Thermal management with graphene lateral heat spreaders: A feasibility study
Author :
Subrina, Samia ; Kotchetkov, Dmitri ; Balandin, Alexander A.
Author_Institution :
Dept. of Electr. Eng. & Mater. Sci. & Eng. Program, Univ. of California, Riverside, Riverside, CA, USA
fYear :
2010
fDate :
2-5 June 2010
Firstpage :
1
Lastpage :
5
Abstract :
Following an experimental discovery of its extremely high thermal conductivity, graphene was proposed as material for heat removal. To evaluate the feasibility of graphene´s use for thermal management we simulated heat propagation in siliconon- insulator (SOI) structures with and without graphene or few-layer graphene (FLG) underlayers. A graphene heat spreader layer, when used, was sandwiched between the oxide layer and the Si substrate. The two ends of the graphene layer were attached to the side heat sinks, thus forming the lateral channel for heat escape. The simulations were carried out with the finite element method using COMSOL software. The thermal conductivity of graphene or FLG was assumed to be within the range from 1000 W/mK to 5000 W/mK. Our simulations have shown that for a given set of parameters of the device structure and a number of transistors the maximum temperature in the hot spots decreased by 70 K when graphene layers were embedded in the chip. The effect of the graphene lateral heat spreaders was more pronounced when the number of transistors increased. The obtained results suggest that graphene and FLG heat spreaders have a potential for the hotspot removal while incorporated in the chip design or used as filler in the thermal interface materials.
Keywords :
elemental semiconductors; heat sinks; silicon; silicon-on-insulator; thermal management (packaging); COMSOL software; FLG heat spreaders; SOI structures; Si; few-layer graphene underlayers; fillers; graphene lateral heat spreaders; heat escape; heat propagation; heat removal; heat sinks; lateral channel; siliconon-insulator; temperature 70 K; thermal conductivity; thermal interface materials; thermal management; Conducting materials; Heat sinks; MOSFETs; Silicon on insulator technology; Substrates; Temperature; Thermal conductivity; Thermal engineering; Thermal management; Thermal management of electronics; Graphene; graphene heat spreaders; heat conduction; silicon-on-insulator; thermal management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2010 12th IEEE Intersociety Conference on
Conference_Location :
Las Vegas, NV
ISSN :
1087-9870
Print_ISBN :
978-1-4244-5342-9
Electronic_ISBN :
1087-9870
Type :
conf
DOI :
10.1109/ITHERM.2010.5501372
Filename :
5501372
Link To Document :
بازگشت