A 1.2V 130μA 10-bit MOS-Only Log-Domain ΣΔ Modulator

Author

Redondo, X. ; Pallarès, J. ; Serra-Graells, F.

Author_Institution

Inst. de Microelectron. de Barcelona, Centro Nacional de Microelectron., Bellaterra

fYear

2007

fDate

27-30 May 2007

Firstpage

17

Lastpage

20

Abstract

This paper presents a new low-voltage MOS-only circuit technique to implement oversampling ΣΔ modulators in purely digital CMOS technologies. The basis of the proposed design strategy is a combination of log domain processing and the MOSFET operating in subthreshold. In this sense, compact circuit implementations are given for all the required basic building blocks, such as compressors, integrators, quantizers and DACs. Finally, experimental results are presented for a complete 4th-order 64-oversampling 1-bit ΣΔ modulator integrated using a standard 0.35μm 1-polySi 3-metal digital CMOS technology.

Keywords

CMOS integrated circuits; MOSFET; low-power electronics; sigma-delta modulation; ΣΔ modulators; 0.35 micron; 1 bit; 1.2 V; 10 bit; 130 μA; MOSFET; digital CMOS technologies; log domain processing; CMOS digital integrated circuits; CMOS technology; Digital modulation; Digital signal processing; Filters; Integrated circuit technology; MIM capacitors; MOS capacitors; MOSFET circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.378171

Filename

4252560