DocumentCode
2889461
Title
A sense-signal doubling circuit for DRAMs
Author
Rainer, Karin ; Hoffmann, Karel ; Johann, H.
Author_Institution
Bundeswehr University, Munich, Germany
Volume
XXX
fYear
1987
fDate
0-0 Feb. 1987
Firstpage
16
Lastpage
17
Abstract
A preamplifier that doubles the sense signal of DRAMs by switching two capacitors between bit and reference lines that fit in a 2.3μm bitline pitch has been implemented on a test chip.
Keywords
Capacitance; Capacitors; Circuit testing; Coupling circuits; Laboratories; Preamplifiers; Pulse amplifiers; Random access memory; Resistors; Signal detection;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1987.1157202
Filename
1157202
Link To Document