Title :
A sense-signal doubling circuit for DRAMs
Author :
Rainer, Karin ; Hoffmann, Karel ; Johann, H.
Author_Institution :
Bundeswehr University, Munich, Germany
Abstract :
A preamplifier that doubles the sense signal of DRAMs by switching two capacitors between bit and reference lines that fit in a 2.3μm bitline pitch has been implemented on a test chip.
Keywords :
Capacitance; Capacitors; Circuit testing; Coupling circuits; Laboratories; Preamplifiers; Pulse amplifiers; Random access memory; Resistors; Signal detection;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157202
