DocumentCode :
28895
Title :
Method for Improving the Stability of Gen 5 Silicon Thin-film Tandem Solar Cell
Author :
Ching-In Wu ; Sheng-Po Chang ; Shoou-Jinn Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
3
Issue :
4
fYear :
2013
fDate :
Oct. 2013
Firstpage :
1140
Lastpage :
1143
Abstract :
For silicon thin-film solar cells, it is well known that one of the most important methods for preparing amorphous silicon doped with hydrogen having good stability against light-soaking degradation is by properly tuning the H2 dilution ratio in the intrinsic i-layer. However, it is difficult to improve the longevity of a Gen 5 silicon thin-film tandem module by manipulating the H2 ratio within one i-layer alone because hydrogen treatment can easily compromise the front P-layer. To solve this problem, we propose the “graded i-layer” method, which incorporates multiple i-layers with different hydrogen dilution ratios in place of the original single i-layer. By this method, a solar cell could provide higher initial power, and the degradation ratio of the module could be reduced by approximately 2%.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor thin films; silicon; solar cells; thin film devices; Gen 5 silicon thin-film tandem module; Gen 5 silicon thin-film tandem solar cells; Si:H; amorphous silicon; graded i-layer method; hydrogen dilution ratio; hydrogen treatment; module degradation ratio; Degradation; Hydrogen; Photovoltaic cells; Silicon; Thin films; Degradation; graded i-layer; hydrogen dilution; thin film solar cell;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2270342
Filename :
6555893
Link To Document :
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