DocumentCode :
2889572
Title :
A 128K flash EEPROM using double polysilicon technology
Author :
Samachisa, G. ; Chien-Sheng Su ; Yu-Sheng Kao ; Smarandoiu, G. ; Ting Wong ; Chenming Hu
Author_Institution :
SEEQ Technology, San Jose, CA, USA
Volume :
XXX
fYear :
1987
fDate :
0-0 Feb. 1987
Firstpage :
76
Lastpage :
77
Abstract :
An EEPROM with a 43μm2cell containing an integral select transistor will be reported. The chip features 140ns access time, 1ms/byte program time, 1s chip erase time and 1000 cycle endurance. Yields of the 4.6×3.4mm chip in a 2.5μm NMOS process are comparable to those of an EPROM.
Keywords :
Circuits; Decoding; Degradation; EPROM; Electrons; Nonvolatile memory; Silicon; Space vector pulse width modulation; Tunneling; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1987.1157210
Filename :
1157210
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2889572
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