DocumentCode :
2889668
Title :
Conjugate direction waveform methods for transient two-dimensional simulation of MOS devices
Author :
Lumsdaine, A. ; Reichelt, M. ; White, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fYear :
1991
fDate :
11-14 Nov. 1991
Firstpage :
116
Lastpage :
119
Abstract :
A conjugate-direction based acceleration to the waveform relaxation (WR) algorithm is derived. Experimental results demonstrated the effectiveness of the acceleration when solving the large, sparsely connected algebraic and differential system generated by standard spatial discretization of the 2D time-dependent semiconductor device equations. The waveform conjugate-direction methods were up to 15 times faster than ordinary WR.<>
Keywords :
metal-insulator-semiconductor devices; relaxation theory; semiconductor device models; transient response; 2D simulation; 2D time-dependent semiconductor device equations; MOS devices; conjugate-direction; sparsely connected; spatial discretization; waveform conjugate-direction methods; waveform relaxation; Acceleration; Charge carrier processes; Computational modeling; Computer simulation; Differential equations; Iterative algorithms; Jacobian matrices; MOS devices; Nonlinear equations; Poisson equations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 1991. ICCAD-91. Digest of Technical Papers., 1991 IEEE International Conference on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-8186-2157-5
Type :
conf
DOI :
10.1109/ICCAD.1991.185207
Filename :
185207
Link To Document :
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