DocumentCode
2889668
Title
Conjugate direction waveform methods for transient two-dimensional simulation of MOS devices
Author
Lumsdaine, A. ; Reichelt, M. ; White, J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fYear
1991
fDate
11-14 Nov. 1991
Firstpage
116
Lastpage
119
Abstract
A conjugate-direction based acceleration to the waveform relaxation (WR) algorithm is derived. Experimental results demonstrated the effectiveness of the acceleration when solving the large, sparsely connected algebraic and differential system generated by standard spatial discretization of the 2D time-dependent semiconductor device equations. The waveform conjugate-direction methods were up to 15 times faster than ordinary WR.<>
Keywords
metal-insulator-semiconductor devices; relaxation theory; semiconductor device models; transient response; 2D simulation; 2D time-dependent semiconductor device equations; MOS devices; conjugate-direction; sparsely connected; spatial discretization; waveform conjugate-direction methods; waveform relaxation; Acceleration; Charge carrier processes; Computational modeling; Computer simulation; Differential equations; Iterative algorithms; Jacobian matrices; MOS devices; Nonlinear equations; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 1991. ICCAD-91. Digest of Technical Papers., 1991 IEEE International Conference on
Conference_Location
Santa Clara, CA, USA
Print_ISBN
0-8186-2157-5
Type
conf
DOI
10.1109/ICCAD.1991.185207
Filename
185207
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