DocumentCode :
2889814
Title :
PWM for active thermal protection in three level neutral point clamped inverters
Author :
The-Minh Phan ; Riedel, Gernot ; Oikonomou, Nikolaos ; Pacas, Mario
Author_Institution :
Power Electron. & Electr. Drives, Univ. Siegen, Siegen, Germany
fYear :
2013
fDate :
3-6 June 2013
Firstpage :
906
Lastpage :
911
Abstract :
In high power applications, in which the discrete power switches are mounted on separate heatsinks, an overload of a semiconductor device leads to a local excessive thermal stress and eventually to a failure of the system. Despite of a control strategy that ensures the even distribution of losses in the normal operation, a local thermal overload can arise due to failures in the electronics, in the cooling system, due to an inappropriate positioning of the semiconductor device, etc. In this paper, a new fault tolerant control approach is introduced to deal with this matter. When detecting increased thermal stress of one IGBT module, the switching strategy is altered in order to reduce the load of that particular IGBT module and to redistribute the losses and consequently the heat from the affected group or valve to the other switches. Hence, the temperature of the stressed switch is kept under the critical limit and the thermal overload is reduced. In such way the reliability and the lifetime of the converter is maximized even in case of thermal failure. In the proposed novel modulation concept, the balancing of the neutral point potential of the 3L-NPC Inverter is also ensured without any additional hardware.
Keywords :
PWM invertors; fault diagnosis; heat sinks; insulated gate bipolar transistors; power semiconductor switches; reliability; thermal stresses; 3L-NPC inverter; IGBT module; PWM; active thermal protection; control strategy; converter lifetime; converter reliability; cooling system; discrete power switches; fault tolerant control approach; heatsinks; high-power application; local excessive thermal stress; local thermal overload; loss distribution; semiconductor device overload; semiconductor device positioning; stressed switch temperature; switching strategy; system failure; thermal failure; three-level neutral point clamped inverters; Generators; Insulated gate bipolar transistors; Process control; Pulse width modulation; Switches; Switching loss; Neutral point balancing; active lifetime extension; discontinuous PWM; fault tolerant control; space vector PWM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ECCE Asia Downunder (ECCE Asia), 2013 IEEE
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4799-0483-9
Type :
conf
DOI :
10.1109/ECCE-Asia.2013.6579213
Filename :
6579213
Link To Document :
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