• DocumentCode
    2890145
  • Title

    Engineered threshold voltage in AlGaN/GaN HEMTs for normally-off operation

  • Author

    Jung-Ruey Tsai ; Yi-Sheng Chang ; Kuo-Shu Wei ; Ting-Ting Wen

  • Author_Institution
    Dept. of Photonics & Commun. Eng., Asia Univ., Taichung, Taiwan
  • fYear
    2015
  • fDate
    4-6 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work proposed the normally-off gate-recessed AlGaN/GaN high electron mobility transistors (HEMTs) with more suitable threshold voltages by adjusting the Al mole fraction in the various AlGaN layer thickness under the gate region. It is found that the slope of threshold voltage versus Al mole fraction curves is decreased with decreasing the thickness of AlGaN layer due to the decrease of piezoelectric effect on 2DEG concentration.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas concentration; aluminium mole fraction; engineered threshold voltage; gate recessed HEMT; high electron mobility transistors; normally off HEMT; piezoelectric effect; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Threshold voltage; Wide band gap semiconductors; AlGaN; GaN; HEMT; threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2015 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ISNE.2015.7131989
  • Filename
    7131989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2890145