Title :
Engineered threshold voltage in AlGaN/GaN HEMTs for normally-off operation
Author :
Jung-Ruey Tsai ; Yi-Sheng Chang ; Kuo-Shu Wei ; Ting-Ting Wen
Author_Institution :
Dept. of Photonics & Commun. Eng., Asia Univ., Taichung, Taiwan
Abstract :
This work proposed the normally-off gate-recessed AlGaN/GaN high electron mobility transistors (HEMTs) with more suitable threshold voltages by adjusting the Al mole fraction in the various AlGaN layer thickness under the gate region. It is found that the slope of threshold voltage versus Al mole fraction curves is decreased with decreasing the thickness of AlGaN layer due to the decrease of piezoelectric effect on 2DEG concentration.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas concentration; aluminium mole fraction; engineered threshold voltage; gate recessed HEMT; high electron mobility transistors; normally off HEMT; piezoelectric effect; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Threshold voltage; Wide band gap semiconductors; AlGaN; GaN; HEMT; threshold voltage;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131989
