Title :
Goals for a basic level IGBT model with easy parameter extraction
Author :
Lauritzen, Peter O. ; Andersen, Gert K. ; Perera, P. D Chandana ; Subramanian, Ramanathan ; Bhat, K.N.
Author_Institution :
Washington Univ., Seattle, WA, USA
Abstract :
Three models were evaluated as possible “basic” level IGBT models, and none were found to be satisfactory. Specific goals for simple parameter extraction are proposed as the primary criteria in the development of basic IGBT models. A new basic model was developed which offers promising results. Performance can be improved with additional parameter optimization
Keywords :
insulated gate bipolar transistors; semiconductor device models; basic level IGBT model; basic model; parameter extraction; parameter optimization; Circuit simulation; Equations; Insulated gate bipolar transistors; Libraries; MOSFET circuits; Parameter extraction; Power engineering and energy; Power semiconductor devices; SPICE; Tail;
Conference_Titel :
Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
Conference_Location :
Blacksburg, VA
Print_ISBN :
0-7803-6561-5
DOI :
10.1109/CIPE.2000.904697
