DocumentCode
2890312
Title
Analytical GTO turn-off model under snubberless turn-off condition
Author
Li, Xuening ; Huang, A.Q. ; Li, Yuxin
Author_Institution
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2000
fDate
2000
Firstpage
102
Lastpage
107
Abstract
Based on the analysis of numerical simulation results, an analytical turn-off model for the gate turn-off thyristor (GTO) under snubberless condition is developed. The turn-off process predicted by the analytical model is in good agreement with numerical simulation and experimental results
Keywords
numerical analysis; semiconductor device models; switching; thyristors; analytical GTO turn-off model; numerical simulation; snubberless turn-off condition; thyristors; turn-off process; Analytical models; Anodes; Cathodes; Charge carrier processes; Current density; Insulated gate bipolar transistors; Numerical simulation; Power system modeling; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
Conference_Location
Blacksburg, VA
Print_ISBN
0-7803-6561-5
Type
conf
DOI
10.1109/CIPE.2000.904699
Filename
904699
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