DocumentCode
2890323
Title
A novel power diode model for circuit simulation
Author
Bai, Yuming ; Huang, Alex Q. ; Xu, Zhenxue
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2000
fDate
2000
Firstpage
108
Lastpage
113
Abstract
This paper presents a novel hybrid power diode model for circuit simulation. All parameters in this model can be determined experimentally. The performance of the model under different operation conditions are analyzed and compared with the experimental results. The model is implemented as a MAST template in the SaberTM simulator exhibiting much faster simulation speed compared with the physics-based diode model while maintains good performance
Keywords
circuit simulation; power semiconductor diodes; semiconductor device models; MAST template; Saber; circuit simulation; computer simulation; modelling performance; operation conditions; power diode model; Capacitors; Circuit simulation; Contact resistance; Equations; Power electronics; Power system modeling; Resistors; Semiconductor diodes; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
Conference_Location
Blacksburg, VA
Print_ISBN
0-7803-6561-5
Type
conf
DOI
10.1109/CIPE.2000.904700
Filename
904700
Link To Document