Title :
Lifetime measurements of high polarization strained-superlattice gallium arsenide at beam current >1 milliamp using a new 100kv load lock photogun
Author :
Grames, J. ; Adderley, P. ; Brittian, J. ; Clark, J. ; Hansknecht, J. ; Machie, D. ; Poelker, M. ; Stutzman, M.L. ; Suleiman, R. ; Surles-Law, K.
Author_Institution :
Jefferson Lab., Newport News
Abstract :
A new GaAs DC high voltage load lock photogun has been constructed at Jefferson Laboratory (JLab), with improved vacuum and photocathode preparation capabilities. As reported previously, this gun was used to study photocathode lifetime with bulk GaAs at DC beam currents between 1 and 10 mA. In this submission, lifetime measurements were performed using high polarization strained-superlattice GaAs photocathode material at beam currents to 1 mA, with near bandgap light from a fiber based drive laser having picosecond optical pulses and RF time structure.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; photocathodes; photoemission; semiconductor superlattices; spin polarised electron emission; DC beam currents; DC high voltage photogun; GaAs; Jefferson laboratory; RF time structure; bandgap light; beam current; current 1 mA to 10 mA; fiber based drive laser; high polarization strained-superlattice; load lock photogun; photocathode lifetime; photocathode preparation; picosecond optical pulses; vacuum preparation; voltage 100 kV; Cathodes; Gallium arsenide; Laboratories; Laser beams; Lifetime estimation; Optical fiber polarization; Optical materials; Performance evaluation; Photonic band gap; Voltage;
Conference_Titel :
Particle Accelerator Conference, 2007. PAC. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-0916-7
DOI :
10.1109/PAC.2007.4440691
