Title :
Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory
Author :
Yunmo Koo ; Ambrogio, Stefano ; Jiyong Woo ; Jeonghwan Song ; Ielmini, Daniele ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
Retention of the low resistance state (LRS) in resistive random access memory (ReRAM) significantly decreases at increasing electrical stress due to barrier lowering of ion migration and Joule heating. The LRS failure rate under externally applied bias could be modeled by adopting an Arrhenius equation for ion migration. Accelerated retention failure under voltage stress is explained by the combination of two effects: 1) lowering of the ion migration barrier by external electric field and 2) thermal energy enhancement through local Joule heating. Based on this model, an improved methodology for ReRAM data retention test is proposed, allowing to reduce the testing temperature and the experimental time by several orders of magnitude by applying a relatively low voltage.
Keywords :
failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; life testing; resistive RAM; Arrhenius equation; LRS failure rate; LRS retention; ReRAM data retention test; accelerated retention failure; accelerated retention test method; electrical stress; external electric field; externally-applied bias; ion migration barrier control; local Joule heating; low-resistance state retention; resistive random access memory; testing temperature reduction; thermal energy enhancement; voltage stress; Acceleration; Electric fields; Hafnium compounds; Life estimation; Mathematical model; Switches; Thermal energy; ReRAM; accelerated test; memories; memory fault diagnosis; memory testing; retention;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2394302
