DocumentCode
2892623
Title
Highly Linear Bipolar Transconductor For Broadband High-Frequency Applications with Improved Input Voltage Swing
Author
Pan, Hsuan-Yu Marcus ; Larson, Lawrence E.
Author_Institution
California Univ., La Jolla, CA
fYear
2007
fDate
27-30 May 2007
Firstpage
713
Lastpage
716
Abstract
An all n-p-n highly linear wide-bandwidth bipolar transconductor (Gm) stage is presented based on a variation of Caprio´s quad. The high-frequency (HF) linearity of the improved Gm cell is examined by a Volterra analysis. The improved Gm cell has a higher input voltage swing range than other approaches
Keywords
Volterra series; bipolar integrated circuits; operational amplifiers; Volterra analysis; all n-p-n highly linear wide-bandwidth bipolar transconductor stage; broadband high-frequency applications; high-frequency linearity; highly linear bipolar transconductor; Difference equations; Digital video broadcasting; Frequency; Gain; Hafnium; Linearity; Nonlinear filters; Resistors; Transconductors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.377908
Filename
4252734
Link To Document