A Low Voltage Charge Pump Circuit for RFID Tag EEPROM

Author

Rahman, Labonnah F. ; Reaz, M.B.I. ; Ali, M.A.M.

Author_Institution

Dept. of Electr., Electron. & Syst. Eng., Univ. Kebangsaan Malaysia, Bangi, Malaysia

fYear

2011

fDate

18-20 Nov. 2011

Firstpage

244

Lastpage

246

Abstract

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in low-voltage applications like RFID tag EEPROM. The improved charge pump circuit has been used as a part of the power supply section of fully integrated radio frequency identification(RFID) transponder IC, which has been implemented in a 0.18-um CMOS process. The modified charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The measured output voltage of the enhanced four-stage charge pump circuit with each pumping capacitor of 1pF to drive the capacitive output load is around 5.62V power supply (VDD) voltage.

Keywords

CMOS memory circuits; EPROM; charge pump circuits; radiofrequency identification; radiofrequency integrated circuits; transponders; CMOS process; RFID tag EEPROM; capacitance 1 pF; four-stage charge pump circuit; high performance charge pump circuit; low power dissipation; low voltage charge pump circuit; modified charge pump; power supply section; radiofrequency identification transponder IC; size 0.18 mum; voltage 5.62 V; Capacitors; Charge pumps; EPROM; Nonvolatile memory; Radiofrequency identification; Threshold voltage; Voltage measurement; CMOS; DC/DC; RFID; charge pump;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Engineering and Technology (ICETET), 2011 4th International Conference on

Conference_Location

Port Louis

ISSN

2157-0477

Print_ISBN

978-1-4577-1847-2

Type

conf

DOI

10.1109/ICETET.2011.16

Filename

6120590