Title :
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology
Author :
Fukuda, Kenji ; Watanabe, Yoshihiro ; Makino, E. ; Kawakami, Kenji ; Sato, Jun ; Takagiwa, T. ; Kanagawa, Naoki ; Shiga, H. ; Tokiwa, N. ; Shindo, Y. ; Edahiro, T. ; Ogawa, Tomomi ; Iwai, M. ; Nagao, O. ; Musha, J. ; Minamoto, Teruya ; Yanagidaira, K. ; S
Author_Institution :
Toshiba Semicond., Yokohama, Japan
Abstract :
NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones, netbooks, and so on. This is because higher storage capacity and lower cost are realized through means of technology scaling every year. Emerging markets, such as solid-state drives (SSDs) and data-storage servers, require lower bit cost, higher program and read throughputs, and lower power consumption.
Keywords :
CMOS memory circuits; NAND circuits; flash memories; CMOS technology; MLC NAND flash memory; storage memory devices; Computer architecture; Flash memory; Logic gates; Materials; Microprocessors; Throughput; Transistors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-61284-303-2
DOI :
10.1109/ISSCC.2011.5746280
