• DocumentCode
    2894089
  • Title

    A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology

  • Author

    Fukuda, Kenji ; Watanabe, Yoshihiro ; Makino, E. ; Kawakami, Kenji ; Sato, Jun ; Takagiwa, T. ; Kanagawa, Naoki ; Shiga, H. ; Tokiwa, N. ; Shindo, Y. ; Edahiro, T. ; Ogawa, Tomomi ; Iwai, M. ; Nagao, O. ; Musha, J. ; Minamoto, Teruya ; Yanagidaira, K. ; S

  • Author_Institution
    Toshiba Semicond., Yokohama, Japan
  • fYear
    2011
  • fDate
    20-24 Feb. 2011
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones, netbooks, and so on. This is because higher storage capacity and lower cost are realized through means of technology scaling every year. Emerging markets, such as solid-state drives (SSDs) and data-storage servers, require lower bit cost, higher program and read throughputs, and lower power consumption.
  • Keywords
    CMOS memory circuits; NAND circuits; flash memories; CMOS technology; MLC NAND flash memory; storage memory devices; Computer architecture; Flash memory; Logic gates; Materials; Microprocessors; Throughput; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-61284-303-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2011.5746280
  • Filename
    5746280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2894089