An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory

Author

Chang, Meng-Fan ; Shen, Shin-Jang ; Liu, Chia-Chi ; Wu, Che-Wei ; Lin, Yu-Fan ; Wu, Shang-Chi ; Huang, Chia-En ; Lai, Han-Chao ; King, Ya-Chin ; Lin, Chorng-Jung ; Liao, Hung-Jen ; Chih, Yu-Der ; Yamauchi, Hiroyuki

Author_Institution

Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2011

fDate

20-24 Feb. 2011

Firstpage

206

Lastpage

208

Abstract

In this study, the authors propose a new offset tolerant current-sampling-based SA (CSB-SA) to achieve 7x faster read speed than previous SAs for sensing small ICELL. A fabricated 90nm 512Kb OTP macro, using the CSB-SA and our CMOS-logic compatible OTP cell, achieves 26ns macro random access time for reading sub-200nA lCELL. Measurements also confirmed that this 90nm CSB-SA could achieve sub-100nA sensing.

Keywords

CMOS logic circuits; operational amplifiers; random-access storage; CMOS-logic compatible OTP cell; CSB-SA; OTP macro; cell-current nonvolatile memory; offset-tolerant current-sampling; one-time programming; random access time; sense amplifier; size 90 nm; storage capacity 512 Kbit; Computer architecture; MOS devices; Microprocessors; Nonvolatile memory; Sensors; Solid state circuits; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-61284-303-2

Type

conf

DOI

10.1109/ISSCC.2011.5746284

Filename

5746284