Title :
High-brightness GaSb-based tapered diode-lasers emitting at 1.9 μm
Author :
Pfahler, Christian ; Manz, C. ; Kaufel, Gudrun ; Kelemen, Marc Tibor ; Mikulla, Michael ; Wagner, Joachim
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
We have presented the results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 μm at 20°C. The active layer of the samples consists of three compressively strained GaInSb - QWs, embedded in a broadened AlGaAsSb - waveguide structure. The lateral design is composed of a ridge-waveguide (RW) section followed by a trapezoidal amplifier. The width of both sections has been varied in order to study filamentation effects which have already been described in other material systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor quantum wells; 1.91 micron; 20 C; AlGaAsSb; GaInSb; compressively strained QW; emission wavelength; filamentation effect; high-brightness tapered diode-laser; material system; ridge-waveguide; trapezoidal amplifier; waveguide structure; Brightness; Diode lasers; Heat sinks; Laser beams; Laser excitation; Laser modes; Optical materials; Power conversion; Power generation; Temperature;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1567887
