• DocumentCode
    2894591
  • Title

    Optimal Body Biasing for Minimum Leakage Power in Standby Mode

  • Author

    Kim, Kyung Ki ; Kim, Yong-Bin

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA
  • fYear
    2007
  • fDate
    27-30 May 2007
  • Firstpage
    1161
  • Lastpage
    1164
  • Abstract
    This paper describes a new power minimizing method by optimizing supply voltage control and minimizing leakage in active and standby modes, respectively. In the active mode, the control system determines the optimal trade-off between supply voltage and the forward body bias voltage to satisfy the performance requirement. In the standby mode, a new optimal body-bias technique in nanoscale CMOS technology is implemented to monitor subthreshold, gate tunneling, and band-to-band tunneling leakage current and reduce leakage current by optimal substrate bias voltage(forward of reverse biasing). The optimal body bias control system reduces the leakage current by up to 1000 times for ISCAS85 benchmark circuits designed using 32nm CMOS technology
  • Keywords
    CMOS integrated circuits; leakage currents; nanotechnology; voltage control; 32 nm; band-to-band tunneling leakage current; gate tunneling; nanoscale CMOS technology; optimal body bias control system; optimal body bias technique; optimal substrate bias voltage; power minimizing method; supply voltage control; CMOS technology; Circuits; Delay; Dynamic voltage scaling; Leakage current; Monitoring; Optimal control; Power dissipation; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    1-4244-0920-9
  • Electronic_ISBN
    1-4244-0921-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2007.378256
  • Filename
    4252846