DocumentCode
2894636
Title
An 8MB level-3 cache in 32nm SOI with column-select aliasing
Author
Weiss, Don ; Dreesen, Michael ; Ciraula, Michael ; Henrion, Carson ; Helt, Chris ; Freese, Ryan ; Miles, Tommy ; Karegar, Anita ; Schreiber, Russell ; Schneller, Bryan ; Wuu, John
Author_Institution
AMD, Fort Collins, CO, USA
fYear
2011
fDate
20-24 Feb. 2011
Firstpage
258
Lastpage
260
Abstract
High-performance multi-core processors require efficient multi-level cache hierarchies to meet high-bandwidth data requirements. Because level-3 (L3) cache is typically the largest cache on the die, the drive to lower cost places pressure on density, yields, and test time. Performance-per-watt goals and total power constraints also compel a variety of circuit techniques to reduce power. The next generation server processor codenamed "Orochi", implemented on a 32nm high-k metal-gate SOI process with 11 metal layers, consists of four 2-core modules using AMD\´s next-generation architecture, code named "Bulldozer", with 2MB of dedicated L2 cache per module and an 8MB shared L3 cache.
Keywords
cache storage; silicon-on-insulator; Bulldozer; Orochi; column select aliasing; high-k metal-gate SOI process; level-3 cache; memory size 2 MByte; memory size 8 MByte; multicore processor; multilevel cache hierarchy; performance-per-watt goal; size 32 nm; total power constraint; Arrays; Driver circuits; Logic gates; Maintenance engineering; Random access memory; Redundancy; Sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-61284-303-2
Type
conf
DOI
10.1109/ISSCC.2011.5746309
Filename
5746309
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