• DocumentCode
    2894636
  • Title

    An 8MB level-3 cache in 32nm SOI with column-select aliasing

  • Author

    Weiss, Don ; Dreesen, Michael ; Ciraula, Michael ; Henrion, Carson ; Helt, Chris ; Freese, Ryan ; Miles, Tommy ; Karegar, Anita ; Schreiber, Russell ; Schneller, Bryan ; Wuu, John

  • Author_Institution
    AMD, Fort Collins, CO, USA
  • fYear
    2011
  • fDate
    20-24 Feb. 2011
  • Firstpage
    258
  • Lastpage
    260
  • Abstract
    High-performance multi-core processors require efficient multi-level cache hierarchies to meet high-bandwidth data requirements. Because level-3 (L3) cache is typically the largest cache on the die, the drive to lower cost places pressure on density, yields, and test time. Performance-per-watt goals and total power constraints also compel a variety of circuit techniques to reduce power. The next generation server processor codenamed "Orochi", implemented on a 32nm high-k metal-gate SOI process with 11 metal layers, consists of four 2-core modules using AMD\´s next-generation architecture, code named "Bulldozer", with 2MB of dedicated L2 cache per module and an 8MB shared L3 cache.
  • Keywords
    cache storage; silicon-on-insulator; Bulldozer; Orochi; column select aliasing; high-k metal-gate SOI process; level-3 cache; memory size 2 MByte; memory size 8 MByte; multicore processor; multilevel cache hierarchy; performance-per-watt goal; size 32 nm; total power constraint; Arrays; Driver circuits; Logic gates; Maintenance engineering; Random access memory; Redundancy; Sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-61284-303-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2011.5746309
  • Filename
    5746309