DocumentCode
2894830
Title
A circuit and noise model of the field-effect transistor
Author
Bechtel, N.
Author_Institution
Stanford Electronics Laboratory, Stanford, CA, USA
Volume
VI
fYear
1963
fDate
20-22 Feb. 1963
Firstpage
92
Lastpage
93
Keywords
Circuit noise; Cutoff frequency; Distributed parameter circuits; FETs; Laboratories; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1963 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1963.1157484
Filename
1157484
Link To Document