DocumentCode :
2894838
Title :
10 W reliable operation of 100 μm stripe width broad area lasers at 930 nm with small vertical far field
Author :
Sumpf, B. ; Ginolas, A. ; Erbert, G. ; Knauer, A. ; Paschke, K. ; Pittroff, W. ; Staske, R. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
111
Abstract :
Reliable operation of 930 nm broad area diode lasers with a vertical far field angle below 20° (FWHM) at a facet load of about 100 mW/μm stripe width over 2000 h will be demonstrated.
Keywords :
semiconductor device reliability; semiconductor lasers; 10 W; 100 micron; 930 nm; broad-area diode laser reliable operation; vertical far field angle; Aging; Diode lasers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Laser modes; Power generation; Power lasers; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1567899
Filename :
1567899
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2894838
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