DocumentCode
2894860
Title
Aging properties of high-power diode laser arrays: relaxation of packaging-induced strains and corresponding defect creation scenarios
Author
Tomm, Jens W. ; Tien, Tran Quoc ; Oudart, Myriam ; Nagle, Julien
Author_Institution
Max-Born-Inst., Berlin, Germany
fYear
2005
fDate
12-17 June 2005
Firstpage
112
Abstract
We present a study of the aging properties of industrial ´cm-bar´ arrays. Two issues are particularly addressed, namely the evolution of packaging-induced stress with operation time and the interplay between packaging-induced stress and the turn up of defects in the active region.
Keywords
semiconductor device packaging; semiconductor device reliability; semiconductor laser arrays; stress relaxation; active region; aging property; defect creation scenarios; high-power diode laser arrays; packaging-induced strain relaxation; Aging; Capacitive sensors; Diode lasers; Light sources; Optical arrays; Packaging; Power conversion; Semiconductor laser arrays; Thermal stresses; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1567900
Filename
1567900
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