DocumentCode
2895061
Title
Electronically switched silicon Raman lasers
Author
Boyraz, Ozdal ; Jalall, B.
Author_Institution
California Univ., Los Angeles, CA, USA
fYear
2005
fDate
12-17 June 2005
Firstpage
121
Abstract
In this paper we report the proof-of-concept demonstration of electronic switching in a Raman laser by using a diode laser cavity. To the best of our knowledge, this is the first such demonstration. In contrast to traditional Raman lasers, this laser can be directly modulated to transmit data, and can be part of a silicon optoelectronic integrated circuit.
Keywords
Raman lasers; elemental semiconductors; high-speed optical techniques; integrated optoelectronics; laser beams; laser cavity resonators; optical modulation; semiconductor lasers; silicon; Si; data transmission; diode laser cavity; electronically switched silicon Raman lasers; laser modulation; proof-of-concept demonstration; silicon optoelectronic integrated circuit; Diodes; Optical losses; Optical modulation; Optical pulses; Optical pumping; Power generation; Pump lasers; Silicon; Stimulated emission; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1567909
Filename
1567909
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