DocumentCode
2895062
Title
A low noise current readout architecture for fluorescence detection in living subjects
Author
Heitz, Roxana T. ; Barkin, David B. ; O´Sullivan, Thomas D. ; Parashurama, Natesh ; Gambhir, Sanjiv S. ; Wooley, Bruce A.
Author_Institution
Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
20-24 Feb. 2011
Firstpage
308
Lastpage
310
Abstract
This paper introduces a readout circuit designed to interface with the fluorescence sensor presented in O´Sullivan et al., 2010., a monolithically integrated GaAs detector and vertical-cavity surface-emitting laser (VCSEL). The detector signals to be measured are low currents in the range of 5pAto15nA, with bandwidths up to 100 Hz. In order to capture binding dynamics of the fluorescent probe, as well as a wide range of possible tumor sizes and depths, the desired current resolution is 5pA. In applications with such low bandwidths and high sensitivity, a capacitive transimpedance amplifier (CTIA) can be used to provide high SNR through noise averaging (Ou and Chin, 203). The input current is integrated onto a capacitor Cint for a period of time Tint. The output of the CTIA is usually sampled and held at the end of Tint, before being digitized as a DC signal. The readout noise power introduced at the sampling instant, σ2read, limits the maximum achievable SNR of this architecture. If, instead, M samples are taken along the integration ramp and line-fitting is performed, the white noise component of σ2read is reduced by M/12, as shown in Fowler and Gatley, 1991.
Keywords
III-V semiconductors; biomedical electronics; fluorescence; gallium arsenide; integrated circuit noise; operational amplifiers; optical sensors; readout electronics; surface emitting lasers; DC signal; GaAs; VCSEL; binding dynamics; capacitive transimpedance amplifier; current 5 pA to 15 nA; detector signals; fluorescence detection; fluorescence sensor; fluorescent probe; integration ramp; line-fitting; living subjects; low noise current readout architecture; monolithically integrated detector; noise averaging; readout circuit; readout noise power; tumor depths; tumor sizes; vertical-cavity surface-emitting laser; white noise component; Detectors; Fluorescence; Modulation; Monitoring; Noise; Semiconductor device measurement; Tumors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-61284-303-2
Type
conf
DOI
10.1109/ISSCC.2011.5746331
Filename
5746331
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