Title :
Physics of cavity solitons in semiconductors
Author :
Hachair, X. ; Barland, S. ; Giudici, M. ; Balle, S. ; Tredicce, J. ; Lugiato, L.A. ; Tissoni, G. ; Brambilla, M. ; Maggipinto, T. ; Perrin, I.M.
Author_Institution :
Inst. Non-Lineaire de Nice, CNRS-UNSA, Valbonne, France
Abstract :
In the present work we provide a complete and deep description of the characteristics of the cavity solitons in semiconductor cavities. We demonstrate the generation of quite a number of CSs in the transverse section, and perform a careful analysis of the switching process of CSs. The laser where we are intended to generate the cavity solitons is an oxidized bottom-emitter VCSEL emitting around 970 nm at threshold.
Keywords :
laser cavity resonators; optical solitons; semiconductor lasers; surface emitting lasers; cavity soliton; oxidized bottom-emitter VCSEL; semiconductor cavity; switching process; transverse section; Cascading style sheets; Laser beams; Nonlinear optics; Optical arrays; Optical sensors; Optical solitons; Physics; Semiconductor lasers; Stationary state; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1567918
