DocumentCode :
2895289
Title :
A nonlinear transistor model for the prediction of circuit transient response
Author :
Wilfinger, R. ; Kiankhooy-Fard, P.
Author_Institution :
IBM Corp., Poughkeepsie, NY, USA
Volume :
VII
fYear :
1964
fDate :
19-21 Feb. 1964
Firstpage :
46
Lastpage :
47
Keywords :
Capacitance; Charge carrier lifetime; Differential equations; Diodes; Equivalent circuits; Inverters; Nonlinear equations; Predictive models; Silicon devices; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1964 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1964.1157507
Filename :
1157507
Link To Document :
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