Macroscopic theory and numerical modelling of carrier transport and leakage effects in semiconductor laser heterostructures

Author

Zakhleniuk, N.A. ; Adams, M.J.

Author_Institution

Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK

fYear

2005

fDate

12-17 June 2005

Firstpage

136

Abstract

In this report we present the results of both analytical theory and numerical modelling of electron/hole transport in InP/InGaAsP long-wavelength lasers. For numerical simulation we use the ISE-AG commercial software package DESSIS. The efficiency of carrier injection into the active region (AR) as well as the leakage currents of electrons and holes out of this region determine the main power characteristics and performance of semiconductor laser heterodiodes.

Keywords

III-V semiconductors; electron mobility; gallium arsenide; hole mobility; indium compounds; leakage currents; semiconductor diodes; semiconductor heterojunctions; semiconductor lasers; DESSIS; ISE-AG commercial software package; InP-InGaAsP; InP/InGaAsP long-wavelength lasers; carrier transport; electron/hole transport; leakage effect; macroscopic theory; numerical modelling; semiconductor laser heterostructures; Charge carrier processes; Indium phosphide; Laser modes; Laser theory; Leakage current; Numerical models; Numerical simulation; Power lasers; Semiconductor lasers; Software packages;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1567924

Filename

1567924