DocumentCode
2895362
Title
Comparison of 65nm LP bulk and LP PD-SOI with adaptive power gate body bias for an LDPC codec
Author
Le Coz, Julien ; Flatresse, Philippe ; Engels, Sylvain ; Valentian, Alexandre ; Belleville, Marc ; Raynaud, Christine ; Croain, Damien ; Urard, Pascal
Author_Institution
STMicroelectronics, Crolles, France
fYear
2011
fDate
20-24 Feb. 2011
Firstpage
336
Lastpage
337
Abstract
A Low-Density Parity-Check (LDPC) codec circuit is implemented in a 65nm Low-Power Partially-Depleted SOI (LP PD-SOI) technology, as well as in a "conventional" Low-Power Bulk technology for a fair comparison. PD-SOI allows to increase maximum frequency versus bulk at a given voltage, and to decrease dynamic power versus bulk at a given frequency. Thanks to a digital power switching technique specifically optimized for LP PD-SOI, we demonstrate a leakage current reduction versus bulk 65nm LP implementation, solving one of the most critical problems of PD-SOI technology, as identified in previous publications.
Keywords
CMOS digital integrated circuits; circuit optimisation; codecs; leakage currents; low-power electronics; parity check codes; power semiconductor switches; silicon-on-insulator; LDPC codec; LP PD-SOI; LP bulk; adaptive power gate body bias; digital power-switching technique; leakage current reduction; low-density parity-check codec circuit; low-power bulk technology; low-power partially-depleted SOI technology; size 65 nm; Codecs; Decoding; Leakage current; Parity check codes; Silicon; Switches; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-61284-303-2
Type
conf
DOI
10.1109/ISSCC.2011.5746343
Filename
5746343
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