DocumentCode
2895381
Title
Control of power supply ripple produced sidebands in microwave transistor amplifiers
Author
Edelman, Lawrence
Author_Institution
General Dynamics, Pomona, CA, USA
fYear
1988
fDate
2-4 Aug 1988
Firstpage
334
Lastpage
339
Abstract
Spurious responses in microwave transistor amplifiers can be generated in linear regions of amplifiers due to the gain variations as a function of ripple on their DC power lines. A technique that is useful in predicting and defining the allowable sinusoidal ripple on microwave amplifier DC power supply voltages and in predicting and controlling ripple-generated spurious sidebands is presented. It is assumed that the amplifiers are operating within their linear region
Keywords
amplification; electromagnetic interference; microwave amplifiers; power supply circuits; power transmission lines; solid-state microwave circuits; DC power lines; EMC; EMI; gain variations; linear regions; microwave transistor amplifiers; power supply ripple; sidebands; spurious responses; Amplitude modulation; DC generators; Frequency; Microwave amplifiers; Microwave generation; Microwave transistors; Power amplifiers; Power generation; Power supplies; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 1988. Symposium Record., IEEE 1988 International Symposium on
Conference_Location
Seattle, WA
Type
conf
DOI
10.1109/ISEMC.1988.14138
Filename
14138
Link To Document