DocumentCode :
2895409
Title :
High-power Al-free active region ridge laser diodes for atomic clocks
Author :
Vermersch, F.-J.. ; Lecomte, M. ; Calligaro, M. ; Parilland, O. ; Bansropun, S. ; Krakowski, M.
Author_Institution :
Alcatel Thales III-V Lab, Orsay, France
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
139
Abstract :
We have developed 852 nm laser structures, using an aluminium free active region. For an AR/HR coated ridge device, we have obtained an optical power of 320 mW in a single spatial mode with the beam quality parameter M2=1.5.
Keywords :
aluminium; atomic clocks; semiconductor lasers; 320 mW; 852 nm; AR/HR coated ridge device; Al; Al-free active region; atomic clocks; beam quality parameter; ridge laser diodes; Aluminum; Atom optics; Atomic clocks; Diode lasers; Distributed feedback devices; Optical devices; Optical feedback; Optical interferometry; Optical pumping; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1567927
Filename :
1567927
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2895409
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