Observation of two-beam coupling in semi-insulating GaN with electroabsorption effect

Author

Innami, T. ; Fujimura, R. ; Nomura, M. ; Ashihara, S. ; Shimura, T. ; Kuroda, K.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

2005

fDate

12-17 June 2005

Firstpage

159

Abstract

Most of semi-insulating compound semiconductors show photorefractive effect. Its photorefractive response is quite fast compared with paraelectric and ferroelectric crystals, or organic materials. Sometimes the effect is enhanced by the band edge effect such as the electroabsorption. However, photorefractive effect has not been reported in nitride semiconductors, which are intensely studied as promising nonlinear optical materials for the blue and ultra-violet wavelength region. In this paper, we report the observation of the photorefractive two-beam coupling in semi-insulating GaN thin crystal.

Keywords

III-V semiconductors; electroabsorption; gallium compounds; optical materials; photorefractive effect; GaN; band edge effect; blue wavelength region; electroabsorption effect; ferroelectric crystal; nitride semiconductors; nonlinear optical materials; organic materials; paraelectric crystal; photorefractive effect; semiinsulating GaN; semiinsulating GaN thin crystal; semiinsulating compound semiconductor; two-beam coupling; ultra-violet wavelength region; Crystals; Ferroelectric materials; Gallium nitride; Gratings; Laser excitation; Optical coupling; Organic materials; Photorefractive effect; Photorefractive materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1567947

Filename

1567947