DocumentCode
2895868
Title
A sub-electron readout noise CMOS image sensor with pixel-level open-loop voltage amplification
Author
Lotto, Christian ; Seitz, Peter ; Baechler, Thomas
Author_Institution
Heliotis, Root Längenbold, Switzerland
fYear
2011
fDate
20-24 Feb. 2011
Firstpage
402
Lastpage
404
Abstract
An ultra-low-noise CMOS image sensor based on an alternative pixel circuit featuring pixel-level voltage amplification is reported. Besides a significant reduction in the contribution of electronic noise generated in column-level circuits, pixel-level voltage amplification achieves sub-electron noise of the pixel-level circuit even without any column-level low-pass filter.
Keywords
CMOS image sensors; integrated circuit noise; low noise amplifiers; readout electronics; column-level circuit; electronic noise reduction; pixel-level circuit; pixel-level open-loop voltage amplification; subelectron readout noise; ultra-low-noise CMOS image sensor; CMOS image sensors; Capacitance; Noise; Pixel; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-61284-303-2
Type
conf
DOI
10.1109/ISSCC.2011.5746370
Filename
5746370
Link To Document