A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting

Author

Lee, Sangjoo ; Lee, Kyungho ; Park, Jongeun ; Han, Hyungjun ; Park, Younghwan ; Jung, Taesub ; Jang, Youngheup ; Kim, Bumsuk ; Kim, Yitae ; Hamami, Shay ; Hizi, Uzi ; Bahar, Mickey ; Moon, Changrok ; Ahn, JungChak ; Lee, Duckhyung ; Goto, Hiroshige ; Lee,

Author_Institution

Samsung Electron., Yongin, South Korea

fYear

2011

fDate

20-24 Feb. 2011

Firstpage

416

Lastpage

418

Abstract

As pixel sizes continue to scale down, backside-illuminated (BSI) technology has been recently adopted as a solution to improve pixel SNR performance. In addition, as the application of image sensors widens from digital still cameras to digital camcorders, high-resolution and high-speed operation are required. This paper presents 1/2.33-inch 14.6Mpixel CMOS image sensor employing a 1.4μm BSI pixel architecture with a floating-diffusion (FD) boosting scheme that enables high SNR and high speed read-out.

Keywords

CMOS image sensors; BSI pixel architecture; backside-illuminated CMOS image sensor; backside-illuminated technology; digital camcorders; digital still cameras; floating diffusion boosting; high-speed operation; pixel SNR performance; CMOS image sensors; Capacitance; Crosstalk; Optical crosstalk; Photodiodes; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-61284-303-2

Type

conf

DOI

10.1109/ISSCC.2011.5746377

Filename

5746377