Title :
A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting
Author :
Lee, Sangjoo ; Lee, Kyungho ; Park, Jongeun ; Han, Hyungjun ; Park, Younghwan ; Jung, Taesub ; Jang, Youngheup ; Kim, Bumsuk ; Kim, Yitae ; Hamami, Shay ; Hizi, Uzi ; Bahar, Mickey ; Moon, Changrok ; Ahn, JungChak ; Lee, Duckhyung ; Goto, Hiroshige ; Lee,
Author_Institution :
Samsung Electron., Yongin, South Korea
Abstract :
As pixel sizes continue to scale down, backside-illuminated (BSI) technology has been recently adopted as a solution to improve pixel SNR performance. In addition, as the application of image sensors widens from digital still cameras to digital camcorders, high-resolution and high-speed operation are required. This paper presents 1/2.33-inch 14.6Mpixel CMOS image sensor employing a 1.4μm BSI pixel architecture with a floating-diffusion (FD) boosting scheme that enables high SNR and high speed read-out.
Keywords :
CMOS image sensors; BSI pixel architecture; backside-illuminated CMOS image sensor; backside-illuminated technology; digital camcorders; digital still cameras; floating diffusion boosting; high-speed operation; pixel SNR performance; CMOS image sensors; Capacitance; Crosstalk; Optical crosstalk; Photodiodes; Pixel;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-61284-303-2
DOI :
10.1109/ISSCC.2011.5746377
