DocumentCode :
2896467
Title :
A 4GHz CT ΔΣ ADC with 70dB DR and −74dBFS THD in 125MHz BW
Author :
Bolatkale, Muhammed ; Breems, Lucien J. ; Rutten, Robert ; Makinwa, Kofi A A
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
fYear :
2011
fDate :
20-24 Feb. 2011
Firstpage :
470
Lastpage :
472
Abstract :
In this paper, a high-speed continuous-time (CT) ΔΣ ADC topology is proposed that absorbs the pole normally caused by the quantizer´s input capacitance, while a local feedback loop compensates for the quantizer´s excess delay. These meas ures allow a high-resolution multi-bit ΔΣ ADC to operate at GHz sampling rates. The bandwidth of this CMOS ΔΣ ADC is 6x wider than the state-of-the-art. Compared to a state-of-the-art pipeline BiCMOS ADC, it achieves similar power efficiency and bandwidth, but it only occupies 0.9mm2 in 45nm CMOS, which is essential for low-cost integration. The 4b 3,a-order CT ΔΣ ADC is sam pled at 4GHz and achieves 70dB DR and -74dBFS THD in a 125MHz BW while consuming 256mW. This prototype enables the use of ΔΣ ADCs in applications such as GSM base-stations and HD video systems.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; analogue-digital conversion; delta-sigma modulation; feedback; network topology; CMOS ΔΣ ADC; continuous-time ΔΣ ADC topology; frequency 125 MHz; frequency 4 GHz; local feedback loop; pipeline BiCMOS ADC; Bandwidth; CMOS integrated circuits; Capacitance; Driver circuits; Modulation; Noise; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-61284-303-2
Type :
conf
DOI :
10.1109/ISSCC.2011.5746401
Filename :
5746401
Link To Document :
بازگشت