DocumentCode

2896722

Title

A low noise integrated unibi amplifier with novel biasing scheme and structure

Author

Lin, Huiming ; Karcher, E.

Author_Institution

Westinghouse Electric Corp., Baltimore, MD, USA

Volume

VIII

fYear

1965

fDate

17-19 Feb. 1965

Firstpage

114

Lastpage

115

Keywords

Bipolar transistors; Capacitors; Circuit noise; Diodes; Epitaxial layers; FETs; Fabrication; Impedance; Low-noise amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1965 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1965.1157582

Filename

1157582