A CMOS voltage reference combining body effect with switched-current technique

A precise CMOS voltage reference using body effect and switched-current technique is presented in this paper. To reduce static current, the threshold voltage with body effect in nMOSFET transistor is utilized instead of the V_BE of BJT transistor. Owning to the switched-current technique, only one transistor is required to generate the reference voltage, so that the threshold voltage mismatch in conventional two-transistor configuration is eliminated. The proposed circuit is designed and simulated under 0.18-μm CMOS technology. The output voltage is 147.44 mV, and the temperature coefficient is less than 5.2 ppm/°C ranging from -20°C to 100°C. The voltage line-sensitivity is 0.44 %/V ranging from 1.5 V to 3.3 V. The power-supply-rejection-ratio (PSRR) is -56 dB at 100 Hz. The average current consumption is about 16 μA.