Title :
Novel ultrafast saturable-absorber device with controlled recombination rate based on GalnAsNSb quantum wells
Author :
Le Dû, M. ; Harmand, J.C. ; Travers, L. ; Oudar, J.L.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis, France
Abstract :
In this paper, we use the high rate recombination process in GaInAsNSb quantum well alloys to grow monolithic saturable absorber structures on GaAs substrate for ultrafast optical switching.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical saturable absorption; optical switches; semiconductor quantum wells; GaAs; GaAs substrate; GaInAsNSb; GaInAsNSb quantum well alloys; recombination process; ultrafast monolithic saturable-absorber device; ultrafast optical switching; Absorption; Charge carrier lifetime; Gallium arsenide; Optical pumping; Optical saturation; Radiative recombination; Semiconductor nanostructures; Spontaneous emission; Stimulated emission; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568084
