DocumentCode
2898070
Title
Novel ultrafast saturable-absorber device with controlled recombination rate based on GalnAsNSb quantum wells
Author
Le Dû, M. ; Harmand, J.C. ; Travers, L. ; Oudar, J.L.
Author_Institution
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis, France
fYear
2005
fDate
12-17 June 2005
Firstpage
300
Abstract
In this paper, we use the high rate recombination process in GaInAsNSb quantum well alloys to grow monolithic saturable absorber structures on GaAs substrate for ultrafast optical switching.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical saturable absorption; optical switches; semiconductor quantum wells; GaAs; GaAs substrate; GaInAsNSb; GaInAsNSb quantum well alloys; recombination process; ultrafast monolithic saturable-absorber device; ultrafast optical switching; Absorption; Charge carrier lifetime; Gallium arsenide; Optical pumping; Optical saturation; Radiative recombination; Semiconductor nanostructures; Spontaneous emission; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1568084
Filename
1568084
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