Title :
Saturation fluence and modulation depth of GaInNAs SESAMs around the band edge for optimal mode locking
Author :
Grange, R. ; Rutz, A. ; Liverini, V. ; Haiml, M. ; Schön, S. ; Keller, U.
Author_Institution :
Phys. Dept., ETH Zurich, Switzerland
Abstract :
We measured the saturation fluence and modulation depth of 1.3-μm GalnNAs SESAMs around their band edge. A relation between the photoluminescence and the best operation wavelength of GaInNAs SESAMs for cw mode locking is demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; mirrors; optical saturable absorption; photoluminescence; semiconductor quantum wells; 1.3 micron; GaInNAs; mode locking saturation; modulation depth; photoluminescence; semiconductor saturable absorber mirror; Absorption; Gain measurement; Laser mode locking; Photoluminescence; Physics; Solid lasers; Tail; Tunable circuits and devices; Ultrafast electronics; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568085
